![]() ![]() However, considering the industrial requirements of high mobility and optical transmittance, despite the extensive studies, the reported p-type metal-oxide semiconductors still exhibit insufficient performance 5. Since the commercialisation of the n-type metal-oxide semiconductor a-InGaZnO ( a-IGZO) for thin-film transistors (TFTs) in flat panel displays in 2011, transparent p-type counterparts have attracted increasing interest for high-performance complementary logic circuits and next-generation ‘invisible’ active-matrix organic light-emitting diode displays 1, 2, 3, 4. This study paves the way for the realisation of transparent, flexible, and large-area integrated circuits combined with n-type metal-oxide semiconductor. The CuI:Zn semiconductors show intrinsic advantages for next-generation TFT applications and wider applications in optoelectronics and energy conversion/storage devices. The optimised TFTs annealed at 80 ☌ exhibit a high hole mobility of over 5 cm 2 V −1 s −1 and high on/off current ratio of ~10 7 with good operational stability and reproducibility. In this study, we propose a doping approach through soft chemical solution process and transparent p-type Zn-doped CuI semiconductor for high-performance TFTs and circuits. Although CuI has recently attracted attention owing to its excellent opto-electrical properties, solution processability, and low-temperature synthesis, the uncontrolled copper vacancy generation and subsequent excessive hole doping hinder its use as a semiconductor material in TFT devices. ‘Ideal’ transparent p-type semiconductors are required for the integration of high-performance thin-film transistors (TFTs) and circuits. ![]()
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